Superlattice interface and lattice strain measurement by ion channeling
نویسنده
چکیده
The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the )110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly.
منابع مشابه
Structural study of GaSb/AlSb strained-layer superlattice.
Owing to the lattice mismatch between GaSb and A1Sb, a superlattice consisting of alternating layers of these materials will be strained. We have carried out ion-channeling measurements by backscattering of 1.76-MeV He ions, and present an experimental procedure and a data-analysis technique to measure the difference in strain between the two individual layers-of the superlattice. The data anal...
متن کاملAnomalous ion channeling in AlInN/GaN bilayers: determination of the strain state.
Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which w...
متن کاملAnisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers
Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along ...
متن کاملMolecular Dynamics Study of the Lattice Thermal Conductivity of Kr/Ar Superlattice Nanowires
The nonequilibrium molecular dynamics (NEMD) method has been used to calculate the lattice thermal conductivities of Ar and Kr/Ar nanostructures in order to study the effects of interface scattering, boundary scattering, and elastic strain on lattice thermal conductivity. Results show that interface scattering poses significant resistance to phonon transport in superlattices and superlattice na...
متن کاملInfluence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals
A detailed study of the influence of substrate temperature on the radiation-induced lattice strain field and crystalline-to-amorphous (c-a) phase transition in MeV oxygen ion implanted GaAs crystals has been made using channeling Rutherford backscattering spectroscopy, secondary ion mass spectrometry, and the x-ray rocking curve technique. A comparison has been made between the cases of room te...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011